针对4 mm厚的国产Invar合金进行激光焊接实验，对比分析了不同热输入下接头显微组织的差异性，并探究了晶粒尺寸对接头拉伸性能的影响。结果表明，焊缝区域主要由柱状晶组成，在不同热输入下晶粒的生长模式几乎相似，但柱状晶晶粒的尺寸随着热输入的增加而逐渐增大。低热输入（90 J/mm）条件下的平均晶粒面积为12599.7 μm²，比高热输入（200 J/mm）条件下的细化了29.8%。相比于高热输入，低热输入时焊缝底部的亚晶粒数量增多且尺寸减小，平均二次枝晶间距从6.11 μm左右下降到4.26 μm左右。拉伸结果表明，热输入增加引起的晶粒粗化导致接头的抗拉强度由473.4 MPa下降至432.9 MPa，同时断口处等轴韧窝的尺寸和深度明显减小。

Through the reversible isomerization of trans-cis-trans under the linear polarization light, the molecules of azo materials have the same tropism which is vertical to the polarization of light. This means that azo materials have photo-induced birefringence which is related to optical power and polarization angle of the light. Based on the photo-induced birefringence of azo materials, we design a new type of optically pumped semiconductor vertical external cavity surface emitting laser (OPS-VECSEL) which can control the polarization and frequency of the ejection laser. The functional molecules of azo materials are [3-azo-(4'nitro)]-(9-ethyl)-carbazole (ANECz).